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[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - Research on the photoelectric characteristics of a double barrier structure with quantum dots-quantum well inserted in central well
Shengwei Zhu,, Jianqiang Han,, Fan, Lang., Dayuan Xiong,, Fangmin Guo,Year:
2010
Language:
english
DOI:
10.1109/inec.2010.5424688
File:
PDF, 126 KB
english, 2010