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Hydrogenated amorphous silicon-nitrogen alloys, a-SiNx:Hy: a wide band gap material for optoelectronic devices
Demichelis, F., Crovini, G., Giorgis, F., Pirri, C. F., Tresso, E.Volume:
79
Year:
1996
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.360961
File:
PDF, 338 KB
english, 1996