Investigation of ZrGe Schottky source/drain contacts for Ge...

Materials Science in Semiconductor Processing 2014 / 10 Vol. 26

Investigation of ZrGe Schottky source/drain contacts for Ge p-channel MOSFETs

Yang, H., Gao, J., Nakashima, H.
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Volume:
26
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2014.05.025
Date:
October, 2014
File:
PDF, 599 KB
english, 2014
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