![](/img/cover-not-exists.png)
High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond
M. Geis, D. Rathman, D. Ehrlich, R. Murphy, W. LindleyYear:
1987
Language:
english
DOI:
10.1109/edl.1987.26653
File:
PDF, 364 KB
english, 1987