High-temperature point-contact transistors and Schottky...

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High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond

M. Geis, D. Rathman, D. Ehrlich, R. Murphy, W. Lindley
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Year:
1987
Language:
english
DOI:
10.1109/edl.1987.26653
File:
PDF, 364 KB
english, 1987
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