Comment on "Electronic effects on dislocation...

Comment on "Electronic effects on dislocation velocities in heavily doped silicon" by J. R. Patel, L. R. Testardi, and P. E. Freeland

Schröter, W., Labusch, R., Haasen, P.
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Volume:
15
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.15.4121
Date:
April, 1977
File:
PDF, 196 KB
english, 1977
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