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Comment on "Electronic effects on dislocation velocities in heavily doped silicon" by J. R. Patel, L. R. Testardi, and P. E. Freeland
Schröter, W., Labusch, R., Haasen, P.Volume:
15
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.15.4121
Date:
April, 1977
File:
PDF, 196 KB
english, 1977