Improvement in the internal quantum efficiency of InN grown...

Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers

Seetoh, Ian P., Soh, Chew Beng, Zhang, Li, Patrick Tung, Kar Hoo, Fitzgerald, Eugene A., Jin Chua, Soo
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Volume:
103
Year:
2013
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4821204
File:
PDF, 1.70 MB
english, 2013
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