Distribution of point defects in Si(100)/Si grown by...

Physical Review B 1993 / 8 Vol. 48; Iss. 8

Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy

Asoka-Kumar, P., Gossmann, H.-J., Unterwald, F. C., Feldman, L. C., Leung, T. C., Au, H. L., Talyanski, V., Nielsen, B., Lynn, K. G.
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Volume:
48
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.48.5345
Date:
August, 1993
File:
PDF, 500 KB
english, 1993
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