Erratum: Admittance studies of surface quantization in...

Physical Review B 1975 / 7 Vol. 12; Iss. 2

Erratum: Admittance studies of surface quantization in [100]-oriented Si metal-oxide-semiconductor field-effect transistors

Voshchenkov, A. M., Zemel, J. N.
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Volume:
12
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.12.815
Date:
July, 1975
File:
PDF, 59 KB
english, 1975
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