[IEEE 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. - Kagoshima, Japan (May 31 - June 4, 2004)] 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. - Investigation of drain current transient in InP-based high electron mobility transistors (HEMTs)

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