[IEEE Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) - Singapore (1999.07.9-1999.07.9)] Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) - Series resistance and effective channel mobility degradation in LDD nMOSFETs under hot-carrier stressing
Oh, G.G., Chim, W.K., Chan, D.S.H., Lou, C.L.Year:
1999
Language:
english
DOI:
10.1109/ipfa.1999.791314
File:
PDF, 499 KB
english, 1999