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[IEEE Proceedings of IEEE International Electron Devices Meeting - San Francisco, CA, USA (1989.12.3-1989.12.6)] International Technical Digest on Electron Devices Meeting - A margin-free contact process using an Al/sub 2/O/sub 3/ etch-stop layer for high density devices
Fukase,, Hada,, Aoki,, Kunio,Year:
1992
Language:
english
DOI:
10.1109/iedm.1992.307487
File:
PDF, 334 KB
english, 1992