Anisotropic introduction of intrinsic defects in GaAs...

Physical Review B 1989 / 3 Vol. 39; Iss. 9

Anisotropic introduction of intrinsic defects in GaAs monitored by Raman scattering

Berg, R. S., Mavalvala, Nergis, Warriner, Heidi, Zhang, Bin
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Volume:
39
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.39.6201
Date:
March, 1989
File:
PDF, 209 KB
english, 1989
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