The doping concentrations of indium-doped silicon measured...

Journal of Applied Physics 1978 Vol. 49; Iss. 10

The doping concentrations of indium-doped silicon measured by Hall, C-V, and junction-breakdown techniques

Schroder, D. K., Braggins, T. T., Hobgood, H. M.
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Volume:
49
Year:
1978
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.324424
File:
PDF, 491 KB
english, 1978
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