Thallium-doped silicon ionization and excitation levels by...

Journal of Applied Physics 1975 Vol. 46; Iss. 5

Thallium-doped silicon ionization and excitation levels by infrared absorption

Nevin, Joseph H., Henderson, H. Thurman
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Volume:
46
Year:
1975
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.321852
File:
PDF, 499 KB
english, 1975
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