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[IRE 1987 International Electron Devices Meeting - ()] 1987 International Electron Devices Meeting - A 1M SRAM with full CMOS cells fabricated in a 0.7µm technology

de Werdt, R., van Attekum, P., den Blanken, H., de Bruin, L., op den Buijsch, F., Burgmans, A., T. Doan,, Godon, H., Grief, M., Jansen, W., Jonkers, A., Klaassen, F., Pitt, M., van der Plas, P., Stol
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Year:
1987
Language:
english
DOI:
10.1109/iedm.1987.191480
File:
PDF, 628 KB
english, 1987
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