[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - An efficient method for modeling the effect of implant damage on NMOS devices using effective profiles and device simulation
Vasanth, K., Saxena, S., McNeil, V., List, S., Davis, J., Kapila, D.Year:
1996
Language:
english
DOI:
10.1109/iedm.1996.554081
File:
PDF, 437 KB
english, 1996