Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
1993 / 3 Vol. 11; Iss. 2
Sub-100 nm pattern formation using a novel lithography with SiNx resist by focused ion beam exposure and dry-etching development
Takahashi, S.Volume:
11
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.586669
Date:
March, 1993
File:
PDF, 950 KB
english, 1993