heterointerface formation and epitaxial Si growth by...

Physical Review B 2008 / 5 Vol. 77; Iss. 20

heterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation

Gielis, J. J. H., van den Oever, P. J., Hoex, B., van de Sanden, M. C. M., Kessels, W. M. M.
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Volume:
77
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.77.205329
Date:
May, 2008
File:
PDF, 1.39 MB
english, 2008
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