Ion implanted dopants in GaN and AlN: Lattice sites,...

Journal of Applied Physics 2000 Vol. 87; Iss. 5

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

Ronning, C., Dalmer, M., Uhrmacher, M., Restle, M., Vetter, U., Ziegeler, L., Hofsäss, H., Gehrke, T., Järrendahl, K., Davis, R. F., ISOLDE Collaboration,
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Volume:
87
Year:
2000
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.372154
File:
PDF, 798 KB
english, 2000
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