Influence of N interstitials on the electronic properties of GaAsN alloys
Jin, Y., Jock, R. M., Cheng, H., He, Y., Mintarov, A. M., Wang, Y., Kurdak, C., Merz, J. L., Goldman, R. S.Volume:
95
Year:
2009
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3187915
File:
PDF, 416 KB
english, 2009