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Formation of anion vacancies by Langmuir evaporation from InP and GaAs (110) surfaces at low temperatures
Ebert, Ph., Heinrich, M., Simon, M., Urban, K., Lagally, M. G.Volume:
51
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.51.9696
Date:
April, 1995
File:
PDF, 793 KB
english, 1995