Formation of anion vacancies by Langmuir evaporation from...

Formation of anion vacancies by Langmuir evaporation from InP and GaAs (110) surfaces at low temperatures

Ebert, Ph., Heinrich, M., Simon, M., Urban, K., Lagally, M. G.
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Volume:
51
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.51.9696
Date:
April, 1995
File:
PDF, 793 KB
english, 1995
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