Investigation of Surface- and Buffer-Induced Current...

IEEE Electron Device Letters 2014 / 11 Vol. 35; Iss. 11

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

Wang, Maojun, Yan, Dawei, Zhang, Chuan, Xie, Bing, Wen, Cheng P., Wang, Jinyan, Hao, Yilong, Wu, Wengang, Shen, Bo
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2014.2356720
Date:
November, 2014
File:
PDF, 1.31 MB
english, 2014
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