Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress
Kim, Bosul, Chong, Eugene, Hyung Kim, Do, Woo Jeon, Yong, Hwan Kim, Dae, Yeol Lee, SangVolume:
99
Year:
2011
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3615304
File:
PDF, 792 KB
english, 2011