Improvement of Resistive Switching Uniformity for...

IEEE Electron Device Letters 2014 / 12 Vol. 35; Iss. 12

Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO2 Layer

Liu, Po-Tsun, Fan, Yang-Shun, Chen, Chun-Ching
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2014.2363491
Date:
December, 2014
File:
PDF, 783 KB
english, 2014
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