Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor
Liao, M. H., Liu, C. W., Yeh, Lingyen, Lee, T.-L., Liang, M.-S.Volume:
92
Year:
2008
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2839402
File:
PDF, 537 KB
english, 2008