Splitting kinetics of Si[sub 0.8]Ge[sub 0.2] layers...

Journal of Applied Physics 2008 Vol. 104; Iss. 11

Splitting kinetics of Si[sub 0.8]Ge[sub 0.2] layers implanted with H or sequentially with He and H

Nguyen, Phuong, Bourdelle, K. K., Aulnette, C., Lallement, F., Daix, N., Daval, N., Cayrefourcq, I., Letertre, F., Mazuré, C., Bogumilowicz, Y., Tauzin, A., Deguet, C., Cherkashin, N., Claverie, A.
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Volume:
104
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3033555
File:
PDF, 835 KB
english, 2008
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