Many-electron effects for interstitial transition-metal...

Physical Review B 1982 / 4 Vol. 25; Iss. 8

Many-electron effects for interstitial transition-metal impurities in silicon

DeLeo, Gary G., Watkins, George D., Fowler, W. Beall
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Volume:
25
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.25.4962
Date:
April, 1982
File:
PDF, 1005 KB
english, 1982
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