Interaction of Gd and N incorporation on the band structure...

physica status solidi (b) 2014 / 08 Vol. 251; Iss. 8

Interaction of Gd and N incorporation on the band structure and oxygen vacancies of HfO 2 gate dielectric films

Xiong, Yuhua, Tu, Hailing, Du, Jun, Wang, Ligen, Wei, Feng, Chen, Xiaoqiang, Yang, Mengmeng, Zhao, Hongbin, Chen, Dapeng, Wang, Wenwu
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Volume:
251
Language:
english
Journal:
physica status solidi (b)
DOI:
10.1002/pssb.201451303
Date:
August, 2014
File:
PDF, 672 KB
english, 2014
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