Metal/III-V Schottky barrier height tuning for the design...

Journal of Applied Physics 2010 Vol. 107; Iss. 6

Metal/III-V Schottky barrier height tuning for the design of nonalloyed III-V field-effect transistor source/drain contacts

Hu, Jenny, Saraswat, Krishna C., Wong, H.-S. Philip
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
107
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3327434
File:
PDF, 463 KB
english, 2010
Conversion to is in progress
Conversion to is failed