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Evidence for mobility enhancement in double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Rodriguez, N., Cristoloveanu, S., Gámiz, F.Volume:
102
Year:
2007
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2800194
File:
PDF, 1.01 MB
english, 2007