Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm
Liu, H. F., Liu, W., Yong, A. M., Zhang, X. H., Chua, S. J., Chi, D. Z.Volume:
110
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3638703
File:
PDF, 1.57 MB
english, 2011