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The effect of thermal annealing on the properties of Al–AlO[sub x]–Al single electron tunneling transistors
Scherer, H., Weimann, Th., Zorin, A. B., Niemeyer, J.Volume:
90
Year:
2001
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1389077
File:
PDF, 370 KB
english, 2001