Improved CMOS field isolation using germanium/boron...

IEEE Electron Device Letters 1988 / 08 Vol. 9; Iss. 8

Improved CMOS field isolation using germanium/boron implantation

Pfiester, J.R., Alvis, J.R.
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Volume:
9
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.754
Date:
August, 1988
File:
PDF, 217 KB
english, 1988
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