[IEEE 2006 International Electron Devices Meeting - San...

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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - SiN Gate Dielectric with Oxygen-enriched Interface (OI-SiN) Utilizing Dual-core-SiON Technique for hp65-SoC LOP Application

Tsujikawa, Shimpei, Umeda, Hiroshi, Hayashi, Takashi, Ohnishi, Kazuhiro, Shiga, Katsuya, Kawase, Kazumasa, Yugami, Jiro, Yoshimura, Hidefumi, Yoneda, Masahiro
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Year:
2006
Language:
english
DOI:
10.1109/iedm.2006.347007
File:
PDF, 186 KB
english, 2006
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