Gallium nitride MIS-HEMT using atomic layer deposited Al2O3...

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2013 Vol. 31; Iss. 1

Gallium nitride MIS-HEMT using atomic layer deposited Al2O3 as gate dielectric

Lossy, Richard, Gargouri, Hassan, Arens, Michael, Würfl, Joachim
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Volume:
31
Year:
2013
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.4771655
File:
PDF, 837 KB
english, 2013
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