[IEEE Proceedings of IEEE International Electron Devices Meeting - San Francisco, CA, USA (1989.12.3-1989.12.6)] International Technical Digest on Electron Devices Meeting - A high-performance quadruple well, quadruple poly BiCMOS process for fast 16 Mb SRAMs
Hayden,, Woo,, Taft,, Pelley,, Nguyen,, Mazure,, Kenkare,, Kemp,, Subrahmanyan,, Sitaram,, Lin,, Ko,, King,, Gunderson,, Kirsch,Year:
1992
Language:
english
DOI:
10.1109/iedm.1992.307483
File:
PDF, 521 KB
english, 1992