Molecular dynamics simulations of the solid phase epitaxy...

Journal of Applied Physics 2009 Vol. 106; Iss. 6

Molecular dynamics simulations of the solid phase epitaxy of Si: Growth mechanism and orientation effects

Lampin, E., Krzeminski, C.
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Volume:
106
Year:
2009
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3211972
File:
PDF, 2.91 MB
english, 2009
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