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First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation
Gavrikov, Alexey, Knizhnik, Andrey, Safonov, Andrey, Scherbinin, Andrey, Bagatur’yants, Alexander, Potapkin, Boris, Chatterjee, Aveek, Matocha, KevinVolume:
104
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3006004
File:
PDF, 556 KB
english, 2008