Influence of post-annealing ambient gas on...

Surface and Interface Analysis 2014 / 12 Vol. 46; Iss. 12-13

Influence of post-annealing ambient gas on photoluminescence characteristics for ion beam synthesized Ge nanoparticles in SiO 2 and Si 3 N 4 films

Yu, C. F., Chao, D. S., Tsai, H. S., Liang, J. H.
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Volume:
46
Language:
english
Journal:
Surface and Interface Analysis
DOI:
10.1002/sia.5563
Date:
December, 2014
File:
PDF, 1.38 MB
english, 2014
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