Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the effects of annealing
Luo, J. K., Thomas, H., Morgan, D. V., Westwood, D.Volume:
79
Year:
1996
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.361417
File:
PDF, 379 KB
english, 1996