[IEEE 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2014.4.28-2014.4.30)] Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO2 high-k metal gate 28nm CMOS devices
Wu, P. C., Hsieh, E. R., Lu, P. Y., Chung, Steve S., Chang, K. Y., Liu, C. H., Ke, J. C., Yang, C. W., Tsai, C. T.Year:
2014
Language:
english
DOI:
10.1109/vlsi-tsa.2014.6839679
File:
PDF, 1.93 MB
english, 2014