Structure and stoichiometry of (0001) 4H–SiC/oxide interface
Zhu, Xingguang, Lee, Hang Dong, Feng, Tian, Ahyi, Ayayi C., Mastrogiovanni, Daniel, Wan, Alan, Garfunkel, Eric, Williams, John R., Gustafsson, Torgny, Feldman, Leonard C.Volume:
97
Year:
2010
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3481672
File:
PDF, 551 KB
english, 2010