Distribution of intermediate oxidation states at the silicon/silicon dioxide interface obtained by low-energy ion implantation
Benkherourou, O.Volume:
6
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.575486
Date:
November, 1988
File:
PDF, 561 KB
english, 1988