Stress evolution in surrounding silicon of Cu-filled...

Applied Physics Letters 2011 Vol. 98; Iss. 23

Stress evolution in surrounding silicon of Cu-filled through-silicon via undergoing thermal annealing by multiwavelength micro-Raman spectroscopy

Kwon, W. S., Alastair, D. T., Teo, K. H., Gao, S., Ueda, T., Ishigaki, T., Kang, K. T., Yoo, W. S.
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Volume:
98
Year:
2011
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3596443
File:
PDF, 1.20 MB
english, 2011
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