Vacancy generation in silicon in the temperature range...

Radiation Effects and Defects in Solids 2011 / 06 Vol. 166; Iss. 6

Vacancy generation in silicon in the temperature range 100–633 K under electron irradiation

Kraitchinskii, Anatolii, Kolosiuk, Andrii, Kras'ko, Mykola, Neimash, Volodymyr, Voitovych, Vasul, Makara, Volodymyr, Petrunya, Ruslan, Putselyk, Sergii
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Volume:
166
Language:
english
Journal:
Radiation Effects and Defects in Solids
DOI:
10.1080/10420150.2011.559242
Date:
June, 2011
File:
PDF, 165 KB
english, 2011
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