Low interface trap density in rapid thermally annealed Al/SiN[sub x]:H/InP metal–insulator–semiconductor devices
E. Redondo, N. Blanco, I. Mártil, G. Gonzalez-díazYear:
1999
Language:
english
DOI:
10.1063/1.123433
File:
PDF, 319 KB
english, 1999