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Core-level photoemission measurements of valence-band offsets in highly strained heterojunctions: Si-Ge system
Schwartz, G. P., Hybertsen, M. S., Bevk, J., Nuzzo, R. G., Mannaerts, J. P., Gualtieri, G. J.Volume:
39
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.39.1235
Date:
January, 1989
File:
PDF, 276 KB
english, 1989