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[IEEE ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005. - San Francisco, CA, USA (Feb. 6-10, 2005)] ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005. - A 800Mb/s/pin 2Gb DDR2 SDRAM using an 80nm triple metal technology
Kye Hyun Kyung,, Chi Wook Kim,, Jae Young Lee,, Jeong Hoon Kook,, Sung Min Seo,, Du Yeul Kim,, Jun Hyung Kim,, Jung Sunwoo,, Hi Choon Lee,, Chul Soo Kim,, Byung Hoon Jeong,, Young Soo Sohn,Year:
2005
Language:
english
DOI:
10.1109/isscc.2005.1494072
File:
PDF, 430 KB
english, 2005