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Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors
C. Beer, T. Whall, E. Parker, D. Leadley, B. De Jaeger, G. Nicholas, P. Zimmerman, M. Meuris, S. Szostak, G. Gluszko, L. LukasiakYear:
2007
Language:
english
DOI:
10.1063/1.2828134
File:
PDF, 342 KB
english, 2007