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Addendum: “Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment” [J. Appl. Phys. 79, 7148 (1996)]
I. De Wolf, E. AnastassakisYear:
1999
Language:
english
DOI:
10.1063/1.369385
File:
PDF, 312 KB
english, 1999